CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_thumb_3

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_thumb_4

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_1

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_2

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_3

CORSAIR Vengeance - DDR4 - 32 GB: 2 x 16 GB - SO-DIMM 260-pin - unbuffered_4

Article-No.:

149120

Manufacturer-No.:

CMSX32GX4M2A3200C22

EAN/GTIN:

0840006631897

WEEE Nummer

DE93935395

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Technical specifications

General

Packaged Quantity

RAM

Type

DRAM

Technology

DDR4 SDRAM

Data Integrity Check

Non-ECC

Supply Voltage

1.2

Form Factor

SO-DIMM 260-pin

Memory Speed

3200 MHz

CAS Latency

CL22

Memory Specification Compliance

PC4-25600

Registered or Buffered

Unbuffered

Latency Timings

22-22-22-53

Storage Capacity

32 GB

Product Type

Memory kit

Memory Module

Modules in Kit

Dimensions & Weight

Width

5,5 cm

Depth

13,5 cm

Service & Support

Type

Limited lifetime warranty

Miscellaneous

Color Category

Black

Description

Vengeance Low Profile heat spreaders have a reduced height of 1.03". They're designed for high-performance systems with extra-large CPU coolers, small form factor system builds, or any other space-constrained application where you need high-performance memory but standard Vengeance modules might not fit.

Great looking, great overclocking memory
Corsair Vengeance memory modules are designed with overclockers in mind. Vengeance DIMMs are built using RAM specially selected for their high-performance potential. Aluminum heat spreaders help dissipate heat, and provide the aggressive look that you want in your gaming rig.
Optimized for compatibility with the CPUs and motherboards
Vengeance memory is designed specifically for the latest CPUs. The 1.5V VDIMM spec ensures you get the performance you expect, even without increasing memory voltages.